PART |
Description |
Maker |
MAGX-000035-01500P MAGX-000035-01500P-15 |
GaN Wideband 15 W Pulsed Transistor in Plastic Package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
ECJ-2VB1H104K ECJ-2VB1H103K ERJ-8GEY0R00 ERJ-8GEYJ |
280W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
RFHA1027 |
500W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
MAGX-003135-SB5PPR MAGX-003135-120L00 |
GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
GRM21BF51C106ZE15L GRM188R71H103KA01D 100A3R3BW150 |
225MHz TO 1215MHz, 9W GaN WIDEBAND
|
RF Micro Devices
|
MAGX-000912-125L00 MAGX-000912-SB0PPR |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
MRF6V2010N |
Designed primarily for pulsed wideband large - signal output and driver
|
Motorola Semiconductor Products
|
FX5545G0182V7T2E2 FX5545G0182V1B5E2 |
Low Profile 3mm DC/DC Buck Converter 0.8V to 4.5V, 3A with 380W/in3 Power Density Efficiency up to 95% 扁平3mm的DC / DC降压转换器为0.8V.5V,功率密度与380W/in3效率高达95A
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc.
|
PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管,20
|
Tyco Electronics Rhopoint Components, Ltd.
|
TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP GHz Technology Microsemi, Corp.
|